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dat a sheet product specification supersedes data of 1998 jul 09 1998 oct 21 discrete semiconductors bfg480w npn wideband transistor m3d124
1998 oct 21 2 nxp semiconductors product specification npn wideband transistor bfg480w features ? high power gain ? high efficiency ? low noise figure ? high transition frequency ? emitter is thermal lead ? low feedback capacitance ? linear and non-linear operation. applications ? rf front end with high linearity system demands (cdma) ? common emitter class ab driver. description npn double polysilicon wideba nd transistor with buried layer for low voltage applications in a 4-pin dual-emitter sot343r plastic package. pinning pin description 1emitter 2base 3emitter 4 collector fig.1 simplified outline sot343r. marking code: p6. handbook, halfpage top view msb842 21 4 3 quick reference data symbol parameter conditions typ. max. unit v ceo collector-emitter voltage open base ? 4.5 v i c collector current (dc) 80 250 ma p tot total power dissipation t s ? 60 ? c ? 360 mw f t transition frequency i c =80ma; v ce = 2 v; f = 2 ghz; t amb =25 ? c21 ? ghz g max maximum gain i c =80ma; v ce = 2 v; f = 2 ghz; t amb =25 ? c16 ? db f noise figure i c =8ma; v ce = 2 v; f = 2 ghz; ? s = ? opt 1.8 ? db g p power gain pulsed; class-ab; ? <1:2; t p =5ms; v ce = 3.6 v; f = 2 ghz; p l =100mw 13.5 ? db ? c collector efficiency pulsed; class-ab; ? <1:2; t p =5ms; v ce = 3.6 v; f = 2 ghz; p l =100mw 45 ? % caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
1998 oct 21 3 nxp semico nductors product specification npn wideband transistor bfg480w limiting values in accordance with the absolute maximum rating system (iec 134). note 1. t s is the temperature at the soldering point of the emitter pins. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? 14.5 v v ceo collector-emitter voltage open base ? 4.5 v v ebo emitter-base voltage open collector ? 1v i c collector current (dc) ? 250 ma p tot total power dissipation t s ? 60 ? c; note 1; see fig.2 ? 360 mw t stg storage temperature ? 65 +150 ? c t j operating junction temperature ? 150 ? c fig.2 power derating curve. handbook, halfpage 0 40 80 160 500 0 400 mgr623 t s (c) p tot (mw) 120 300 200 100 thermal characteristics symbol parameter value unit r th j-s thermal resistance from junction to soldering point 250 k/w
1998 oct 21 4 nxp semico nductors product specification npn wideband transistor bfg480w characteristics t j =25 ? c unless otherwise specified. notes 1. g max is the maximum power gain , if k > 1. if k < 1 then g max =msg; seefigs6,7and8. 2. z s is optimized for noise; z l is optimized for gain. symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage i c =50 ? a; i e =0 14.5 ?? v v (br)ceo collector-emitter breakdown voltage i c =5ma; i b =0 4.5 ?? v v (br)ebo emitter-base breakdown voltage i e =100 ? a; i c =0 1 ?? v i cbo collector-base leakage current v ce =5v; v be =0 ?? 70 na h fe dc current gain i c =80ma; v ce = 2 v; see fig.3 40 60 100 c c collector capacitance i e =i e =0; v cb =2v; f=1mhz ? 1.4 ? pf c e emitter capacitance i c =i c =0; v eb =0.5v; f=1mhz ? 2.2 ? pf c re feedback capacitance i c =0; v cb = 2 v; f = 1 mhz; see fig.4 ? 340 ? ff f t transition frequency i c =80ma; v ce =2v; f=2ghz; t amb =25 ? c; see fig.5 ? 21 ? ghz g max maximum power gain; note 1 i c =80ma; v ce =2v; f=2ghz; t amb =25 ? c; seefigs7and8 ? 16 ? db insertion power gain i c =80ma; v ce =2v; f=2ghz; t amb =25 ? c; see fig.8 ? 12 ? db f noise figure i c =8ma; v ce = 2 v; f = 900 mhz; ? s = ? opt ; see fig.13 ? 1.2 ? db i c =8ma; v ce =2v; f=2ghz; ? s = ? opt ; see fig.13 ? 1.8 ? db p l1 output power at 1 db gain compression class-ab; ? <1:2; t p =5ms; v ce =3.6v; i cq =1ma; f=2ghz ? 20 ? dbm ito third order intercept point i c =80ma; v ce =2v; f=2ghz; z s =z sopt ; z l =z lopt ; note 2 ? 28 ? dbm s 21 2
1998 oct 21 5 nxp semico nductors product specification npn wideband transistor bfg480w fig.3 dc current gain as a function of collector current; typical values. v ce =2v. handbook, halfpage 0 50 100 150 100 0 80 mgr624 i c (ma) h fe 60 40 20 i c =0; f=1mhz. fig.4 feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 0 800 400 600 200 0 15 mgr625 234 v cb (v) c re (ff) fig.5 transition frequency as a function of collector current; typical values. f=2ghz; v ce =2v; t amb =25 ? c. handbook, halfpage 30 20 10 0 mgr626 10 10 2 10 3 i c (ma) f t (ghz) f=900mhz; v ce =2v. fig.6 gain as a function of collector current; typical values. handbook, halfpage 0 40 80 160 30 10 0 20 mgr627 120 i c (ma) gain (db) msg s 21 g max
1998 oct 21 6 nxp semico nductors product specification npn wideband transistor bfg480w v ce =2v; f=2ghz. fig.7 gain as a function of collector current; typical values. handbook, halfpage 0 40 80 160 20 0 16 mgr628 i c (ma) gain (db) 120 12 8 4 s 21 g max i c =80ma; v ce =2v. fig.8 gain as a function of frequency; typical values. handbook, halfpage 50 0 10 10 2 10 3 10 4 mgr629 10 20 30 40 gain (db) f (mhz) msg s 21 g max
1998 oct 21 7 nxp semico nductors product specification npn wideband transistor bfg480w fig.9 common emitter input reflection coefficient (s 11 ); typical values. i c =80ma; v ce =2v; z o =50 ?? handbook, full pagewidth mgr630 0 0.2 0.6 0.4 0.8 1.0 1.0 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 1 2 5 180 ?135 ?90 ?45 0 45 90 135 40 mhz 3 ghz fig.10 common emitter forwar d transmission coefficient (s 21 ); typical values. i c =80ma; v ce =2v. handbook, full pagewidth mgr631 25 20 15 10 5 180 ?135 ?90 ?45 0 45 90 135 40 mhz 3 ghz
1998 oct 21 8 nxp semico nductors product specification npn wideband transistor bfg480w i c =80ma; v ce =2v. fig.11 common emitter revers e transmission coefficient (s 12 ); typical values. handbook, full pagewidth mgr632 0.5 0.4 0.3 0.2 0.1 180 ?135 ?90 ?45 0 45 90 135 40 mhz 3 ghz fig.12 common emitter output reflection coefficient (s 22 ); typical values. i c =80ma; v ce =2v; z o =50 ?? handbook, full pagewidth mgr633 0 0.2 0.6 0.4 0.8 1.0 1.0 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 1 2 5 180 ?135 ?90 ?45 0 45 90 135 40 mhz 3 ghz
1998 oct 21 9 nxp semico nductors product specification npn wideband transistor bfg480w noise data v ce = 2 v; typical values. f (mhz) i c (ma) f min (db) ? mag ? angle r n ( ? ) 900 2 1.1 0.41 96.1 0.21 4 1.1 0.31 106.6 0.14 6 1.2 0.27 118.4 0.12 8 1.2 0.26 131.7 0.10 10 1.3 0.28 143.2 0.10 20 1.6 0.39 166.2 0.07 40 2.0 0.49 176.0 0.07 60 2.3 0.57 179.5 0.07 80 2.9 0.45 177.3 0.18 2000 2 2.4 0.57 171.9 0.09 4 2.0 0.49 178.9 0.08 61.80.46 ? 175.7 0.09 81.80.44 ? 171.7 0.09 10 1.8 0.43 ? 168.4 0.09 12 1.8 0.44 ? 165.3 0.10 14 1.8 0.44 ? 163.7 0.10 20 1.9 0.46 ? 158.3 0.11 40 2.3 0.52 ? 150.2 0.14 60 2.6 0.56 ? 147.7 0.18 80 2.8 0.60 ? 146.1 0.22 fig.13 minimum noise figure as a function of collector current; typical values. v ce =2v. handbook, halfpage 02040 80 4 3 1 0 2 mgr634 i c (ma) f min (db) 60 900 mhz 2 ghz application information rf performance at t s ? 60 ? c in a common emitter test circuit (see figs 18 and 19). mode of operation f (ghz) v ce (v) i cq (ma) p l (mw) g p (db) ? c (%) pulsed; class-ab; ? <1:2; t p = 5 ms 2 3.6 1 100 typ. 13.5 typ. 45
1998 oct 21 10 nxp semico nductors product specification npn wideband transistor bfg480w fig.14 power gain and collector efficiency as a function of load power; typical values. pulsed, class-ab operation; ? <1;2; t p =5ms. f=2ghz; v ce = 2.4 v; i cq = 1 ma; tuned at p l =100mw. handbook, halfpage 10 14 18 26 16 12 4 0 8 mgr635 p l (dbm) g p (db) g p 80 60 20 0 40 22 c (%) c fig.15 power gain and collector efficiency as a function of load power; typical values. pulsed, class-ab operation; ? <1;2; t p =5ms. f=2ghz; v ce = 3.6 v; i cq = 1 ma; tuned at p l =100mw. handbook, halfpage 10 14 18 26 16 12 4 0 8 mgr636 p l (dbm) g p (db) g p 80 60 20 0 40 22 c (%) c fig.16 input impedance as function of frequency (series components); typical values. v ce =3.6v; i cq =1ma; p l =100mw; t s ? 60 ? c. handbook, halfpage 1.8 1.85 1.9 2 10 0 8 mgr637 1.95 6 4 2 z i () f (ghz) r i x i fig.17 load impedance as a function of frequency (series components); typical values. v ce =3.6v; i cq =1ma; p l =100mw; t s ? 60 ? c. handbook, halfpage 1.8 1.85 1.9 2 30 0 mgr638 1.95 20 10 z l () f (ghz) r l x l
1998 oct 21 11 nxp semico nductors product specification npn wideband transistor bfg480w fig.18 common emitter test circuit for class-ab operation at 2 ghz. handbook, full pagewidth mgm221 v c v s r1 tr1 l1 l4 l5 c4 c2 dut r2 c3 c1 rf input 50 rf output 50 l2 l3 c6 r3 c7 c5 list of components used in test circuit (see figs 18 and 19) notes 1. american technical ceramics type 100a or capacitor of same quality. 2. the striplines are on a double copper-clad printed-circuit board with ptfe fibre-glass dielectric ( ? r =6.15, tan ? = 0.0019); thickness 0.64 mm, copper cladding = 35 ? m. component description value dimensions catalogue no. c1, c5 multilayer ceramic chip capacitor; note 1 24 pf c2, c4 multilayer ceramic chip capacitor; note 1 2 pf c3, c6 multilayer ceramic chip capacitor, note 1 15 pf c7 multilayer ceramic chip capacitor; note 1 1 nf l1, l4 stripline; note 2 100 ? 18 x 0.2 mm l2 stripline; note 2 50 ? 5x0.8mm l3 stripline; note 2 50 ? 6x0.8mm l5 grade 4s2 ferroxcube chip bead 4330 030 36300 r1 metal film resistor 220 ? ; 0.4 w r2, r3 metal film resistor 10 ? ; 0.4 w tr1 npn transistor bc817 9335 895 20215
1998 oct 21 12 nxp semico nductors product specification npn wideband transistor bfg480w fig.19 printed-circuit board and component layout for 2 ghz class-ab test circuit in fig.18. dimensions in mm. the components are situated on one side of the copper-clad ptfe fibre-glass board, the other side is unetched and serves as a g round plane. earth connections from th e component side to the ground plane ar e made by through metallization. handbook, full pagewidth mbk827 45 35 c4 c6 c7 r3 r2 r1 tr1 c5 l3 l4 l5 output c2 l1 l2 input c1 c3 dut v c v s
1998 oct 21 13 nxp semico nductors product specification npn wideband transistor bfg480w package outline references outline version european projection issue date iec jedec eiaj sot343r d a a 1 l p q detail x c h e e v m a a b 0 1 2 mm scale x 21 4 3 plastic surface-mounted package; reverse pinning; 4 leads sot343r w m b 97-05-21 06-03-16 b p unit a 1 max b p cd e b 1 h e l p qw v mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.0 1.3 e 1 0.2 y 0.1 0.2 1.15 dimensions (mm are the original dimensions) 0.45 0.15 0.23 0.13 e 1 a e y b 1
1998 oct 21 14 nxp semico nductors product specification npn wideband transistor bfg480w data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. definitions product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer, unless nxp semiconductors and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semico nductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without lim itation - lost profits, lost savings, business interrup tion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semi conductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assi stance with ap plications or customer product design. it is customer?s sole responsibility to dete rmine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as for the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
1998 oct 21 15 nxp semico nductors product specification npn wideband transistor bfg480w nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applications and products using nxp semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will c ause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeat ed exposure to lim iting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the general terms and conditions of comme rcial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconductors products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semicond uctors? warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors? standard warranty and nxp semiconductors? product specifications.
nxp semiconductors provides high performance mixed signal and standard product solutions that leverage its leading rf, analog, power management, interface, security and digital processing expertise contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2010 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r77/03/pp 16 date of release: 1998 oct 21

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